FOR IMMEDIATE RELEASE Caracal Announces Patent for Epitaxial Growth of Silicon Carbide Using Chlorinated ChemistryFORD CITY, PA, August 4, 2007 - Caracal, Inc., Ford City, PA today announced the issuance of a patent related to epitaxial growth of silicon carbide (SiC) using chlorinated chemistry. The patent, US patent no. 7247513, is currently awarded in the US and is pending in several other countries. Conventional chemistry for epitaxial growth of SiC growth rates are typically in the order of 5 – 10 µm/h. With Caracal’s newly patented approach the growth rate may be increased to more than 100 µm/h with maintained quality and doping.This breakthrough technology for the SiC field enables the realization of very high voltage power devices needed for a number of applications. Numerous companies and organizations worldwide have independently verified the tremendous benefits of this technology. “We are very excited about this patent being awarded to us in particular since it makes such a huge impact particularly for the power industry”, a spokesperson from Caracal said. The technology has been developed over the past few years with funding from the Office of Naval Research (ONR) who need this technology for their next generation warships. “We are very grateful to Dr. Colin Wood at ONR who together with The Penn State Electro Optics Center and Congressman John Murtha have enabled this work. We are also grateful to Governor Ed Rendell and Dennis Yablonsky with the Department of Community and Economic Development for their support of Caracal”, a spokesperson of Caracal said. Caracal, Inc. is a development stage, advanced semiconductor materials company organized to research, manufacture, and market semiconductor-grade wafers made of Silicon Carbide (SiC) for the Power, RF (radio frequency), and electro-optic markets. SiC substrates are used for those applications where the demands of higher voltage, frequency, or temperature make traditional silicon (or alternative) substrates inadequate. Caracal is currently entering the RF market with a superior, high-resistivity product while completing development of their proprietary, low-cost manufacturing technology and capacity to deliver high-quality wafers to the growing Power device market. ### |
