Research Team

Olle Kordina, Chief Technology Officer

Education: Ph.D., in Materials Science, 1994, at Linkoping University
MS., in Electrical Engineering, 1986 at Lund University

Dr. Olle Kordina, VP is one of the world’s leading silicon carbide materials scientists. With over 100 publications and 20 patents, Dr. Kordina has pioneered many of the silicon carbide growth techniques used in the industry today. He is the main inventor of the High Temperature CVD (HTCVD), the Phase Controlled Sublimation (PCS), the hot-wall CVD techniques, as well as the new technique currently employed at Caracal. After completing his PhD from Linkoping University in Sweden in 1994, he worked at many leading silicon carbide materials companies, including senior roles at Cree and Sterling Semiconductor.

Contact Olle.

Igor Agafonov, Product Engineer

Yevgeniy Shishkin, Research Scientist

Education: PhD in Physics, 2004, University of Pittsburgh, Pittsburgh, PA USA. Bachelor’s Degree in Physics, 1996, Moscow State University, Moscow, Russia.

Dr. Shishkin has over ten years of progressive scientific experience in characterization and development of the silicon carbide technologies. His extensive work with such wide bandgap semiconductors as SiC, GaN and AlN resulted in more than 30 publications. His professional summary includes Chemical Vapor Deposition of 3C, 4H and 6H-SiC using hot-wall CVD reactor; PVT bulk growth of 4H- and 6H-SiC; polishing of SiC; electrochemical etching of SiC and GaN, development of porous SiC and GaN structures; and optical characterization of SiC and AlN at room and cryogenic temperatures. Dr. Shishkin is a researcher with hands-on skills in design and construction of experimental hardware, at the same time he has mastered experimental data analysis and scientific writing.